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Design and fabrication of 10-kV silicon-carbide p-channel IGBTs with hexagonal cells and step space modulated junction termination extension


Authors: Wen, ZX; Zhang, F; Shen, ZW; Chen, J; He, YW; Yan, GG; Liu, XF; Zhao, WS; Wang, L; Sun, GS; Zeng, YP
Volume: 28 Issue: 6 Published: JUN 2019 Language: English Document type: Article
DOI: 10.1088/1674-1056/28/6/068504
10-kV 4H-SiC p-channel insulated gate bipolar transistors (IGBTs) are designed, fabricated, and characterized in this paper. The IGBTs have an active area of 2.25 mm(2) with a die size of 3 mmx 3 mm A step space modulated junction termination extension (SSM-JTE) structure is introduced and fabricated to improve the blocking performance of the IGBTs. The SiC p-channel IGBTs with SSM-JTE termination exhibit a leakage current of only 50 nA at 10 kV. To improve the on-state characteristics of SiC IGBTs, the hexagonal cell (H-cell) structure is designed and compared with the conventional interdigital cell (I-cell) structure. At an on-state current of 50 A/cm(2), the voltage drops of I-cell IGBT and H-cell IGBT are 10.1 V and 8.3 V respectively. Meanwhile, on the assumption that the package power density is 300 W/cm(2), the maximum permissible current densities of the I-cell IGBT and H-cell IGBT are determined to be 34.2 A/cm(2) and 38.9 A/cm(2) with forward voltage drops of 8.8 V and 7.8 V, respectively. The differential specific on-resistance of I-cell structure and H-cell structure IGBT are 72.36 m and 56.92 m, respectively. These results demonstrate that H-cell structure silicon carbide IGBT with SSM-JTE is a promising candidate for high power applications.


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